Product Summary
The BAS19LT1G is a Switching Diode.
Parametrics
BAS19LT1G absolute maximum ratings: (1)Continuous Reverse Voltage VR: 120 Vdc; (2)Peak Forward Current IF: 200 mAdc; (3)Peak Forward Surge Current IFM(surge): 625 mAdc; (4)Junction and Storage Temperature Range, TJ, Tstg: -55 to +150℃; (5)Power Dissipation (Note 1) PD: 385 mW.
Features
BAS19LT1G features: (1)These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BAS19LT1G |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 120V 200mA |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BAS101,215 |
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BAS101S,215 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) Diode Switching 600V 0.1A 3-Pin |
Data Sheet |
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BAS11 |
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BAS116 |
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BAS116,215 |
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BAS116,235 |
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