Product Summary
Agilent Technologies ATF-54143-TR1G is a high dynamic range, low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-54143-TR1G ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz frequency range.
Parametrics
ATF-54143-TR1G absolute maximum ratings: (1)VDS Drain Source Voltage: 5V; (2)VGS Gate - Source Voltage: -5 to 1V ; (3)VGD Gate Drain Voltage: -5 to 1V; (4)IDS Drain Current: 120mA; (5)Pdiss Total Power Dissipation: 725mW ; (6)Pin max. RF Input Power: 13dBm; (7)IGS Gate Source Current: 2mA ; (8)TCH Channel Temperature: 150℃ ; (9)TSTG Storage Temperature: -65 to 150℃; (10)θjc Thermal Resistance: 162℃/W.
Features
ATF-54143-TR1G features: (1)High linearity performance; (2)Enhancement Mode Technology[1]; (3)Low noise figure; (4)Excellent uniformity in product specifications; (5)800 micron gate width; (6)Low cost surface mount small plastic package SOT-343 (4 lead SC-70); (7)Tape-and-Reel packaging option available; (8)Lead-free option available.
Diagrams
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ATF-54143-TR1G |
Avago Technologies |
Transistors RF GaAs Transistor GaAs Single Voltage |
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ATF-10100 |
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ATF-10136 |
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ATF-10170 |
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ATF-10236 |
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Negotiable |
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ATF-10736 |
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Negotiable |
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ATF-10XXX |
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Negotiable |
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