(China (Mainland))
Product Summary
The NTMFS4119NT1G is a Power MOSFET. It is suitable for Notebooks, Graphics Cards, Low Side Switch and DC-DC.
Parametrics
NTMFS4119NT1G absolute maximum ratings: (1)Drain-to-Source Voltage, VDSS: 30 V; (2)Gate-to-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current, Steady State, ID: 18A at TA = 25℃; 13A at Ta=85℃; 30A at TA = 25℃, t≤10 s; (4)Power Dissipation, PD: 2.3W at Steady State TA = 25℃; 6.1W at t ≤10 s TA = 25℃; (5)Continuous Drain Current,ID: 11A at Steady State TA = 25℃; 8.0A at TA=85℃; (6)Power Dissipation, PD: 0.9 W at TA = 25℃; (7)Pulsed Drain Current, IDM: 89 A at tp = 10μs; (8)Operating Junction and Storage Temperature TJ, Tstg: -55 to; (9)150℃; (10)Source Current (Body Diode), IS: 8.0 A; (11)Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 29 A, L = 1 mH, RG = 25Ω), EAS: 421 mJ; (12)Lead Temperature for Soldering Purposes, TL: 260℃.
Features
NTMFS4119NT1G features: (1)Low RDS(on); (2)Fast Switching Times; (3)Low Inductance SO-8 Package; (4)These are Pb-Free Devices.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 NTMFS4119NT1G |
ON Semiconductor |
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Data Sheet |
Negotiable |
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