(China (Mainland))
Product Summary
The STB25NM50N is a MOSFET N-channel metal oxide device.
Features
Characteristics: (1)Mounting Type: Surface Mount; (2)FET Type: MOSFET N-Channel, Metal Oxide; (3)Drain to Source Voltage (Vdss): 500V; (4)Current - Continuous Drain (Id) at 25℃: 22A; (5)Rds On (Max) at Id, Vgs: 140 mOhm at 11A, 10V; (6)Input Capacitance (Ciss) at Vds: 2565pF at 25V; (7)Power - Max: 160W; (8)Packaging: Cut Tape (CT); (9)Gate Charge (Qg) at Vgs: 84nC at 10V; (10)Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB; (11)FET Feature: Standard; (12)Lead Free Status: Lead Free; (13)RoHS Status: RoHS Compliant.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 STB25NM50N |
STMicroelectronics |
MOSFET N Ch 550V TJMAX 0.12 Ohm 21.5A |
Data Sheet |
Negotiable |
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STB25NM50N-1 |
STMicroelectronics |
MOSFET N-CHANNEL MFT |
Data Sheet |
Negotiable |
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