Product Summary
The S29AL016D70TAI02 is a , Flash memory organized as 2,097,152 bytes or 1,048,576 words. The S29AL016D70TAI02 is offered in , and 48-pin TSOP packages. The S29AL016D70TAI02 is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The S29AL016D70TAI02 can also be programmed in standard EPROM programmers.
Parametrics
S29AL016D70TAI02 absolute maximum ratings: (1)Storage Temperature Plastic Packages: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –65℃ to +125℃; (3)Voltage with Respect to Ground: VCC: –0.5 V to +4.0 V, A9, OE#, and RESET#: –0.5 V to +12.5 V, All other pins: –0.5 V to VCC+0.5 V; (4)Output Short Circuit Current: 200 mA.
Features
S29AL016D70TAI02 features: (1)High performance: Access times as fast as 70 ns; (2)Ultra low power consumption (typical values at 5 MHz): 200 nA Automatic Sleep mode current, 200 nA standby mode current, 9 mA read current, 20 mA program/erase current; (3)Cycling endurance: 1,000,000 cycles per sector typical; (4)Data retention: 20 years typical; (5)Package Options: 48-ball FBGA, 48-pin TSOP, 44-pin SOP.
Diagrams
S29AL004D |
Other |
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Negotiable |
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S29AL008D |
Other |
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Negotiable |
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S29AL008D55MFIR13 |
Other |
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Negotiable |
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S29AL008D70TAI013 |
Spansion |
Flash 8MB CMOS 3.0V 70ns TOP SECTOR |
Data Sheet |
Negotiable |
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S29AL008J55BFIR10 |
Spansion |
Flash 8M (1MX8/512KX16) 3V Top Boot Sector |
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S29AL008J55BFIR20 |
Spansion |
Flash 8MB CMOS 3.0V 55ns BTM SECTOR PBF |
Data Sheet |
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