Product Summary

The KTC3875S-GR-RTK/P is a semiconductor. The KTC3875S-GR-RTK/P has general purpose application and switching application.

Parametrics

KTC3875S-GR-RTK/P maximum rating: (1)Collector-Base Voltage VCBO: 60 V; (2)Collector-Emitter Voltage VCEO: 50 V; (3)Emitter-Base Voltage VEBO: 5 V; (4)Collector Current IC: 150 mA; (5)Base Current IB: 30 mA; (6)Collector Power Dissipation PC: 150 mW; (7)Junction Temperature Tj: 150℃; (8)Storage Temperature Range Tstg: -55 to 150℃.

Features

KTC3875S-GR-RTK/P features: (1)Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.); (2)High hFE: hFE=70 to 700; (3)Low Noise: NF=1dB(Typ.), 10dB(Max.); (4)Complementary to KTA1504S.

Diagrams

KTC3875S-GR-RTK/P block diagram

KTC3875-GR-RTK
KTC3875-GR-RTK

Other


Data Sheet

Negotiable 
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Data Sheet

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