Product Summary
The IPD90P03P4L-04 is a OptiMOS-P2 Power-Transistor.
Parametrics
IPD90P03P4L-04 absolute maximum ratings: (1)Continuous drain current: -90A; (2)Pulsed drain current: -360A; (3)Avalanche energy, single pulse: 370 mJ; (4)Avalanche current, single pulse: -90 A; (5)Gate source voltage VGS: +5/-16 V; (6)Power dissipation Ptot T C=25 ℃: 137 W; (7)Operating and storage temperature T j, T stg: -55 ... +175 ℃.
Features
IPD90P03P4L-04 features: (1)P-channel - Logic Level - Enhancement mode; (2)AEC qualified; (3)MSL1 up to 260℃ peak reflow; (4)175℃ operating temperature; (5)Green package (RoHS compliant); (6)100% Avalanche tested; (7)Intended for reverse battery protection.
Diagrams

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![]() IPD90P03P4L-04 |
![]() Infineon Technologies |
![]() MOSFET P-Channel MOSFET 30V |
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![]() IPD90N03S4L-02 |
![]() Infineon Technologies |
![]() MOSFET OPTIMOS-T2 PWR-TRANS 30V 90A 2.2mOhms |
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![]() IPD90N03S4L-03 |
![]() Infineon Technologies |
![]() MOSFET OPTIMOS-T2 PWR-TRANS 30V 90A 3mOhms |
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![]() IPD90N04S3-04 |
![]() Infineon Technologies |
![]() MOSFET OPTIMOS -T PWR-TRANS 40V 90A 3.6mOhms |
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![]() IPD90N04S3-H4 |
![]() Infineon Technologies |
![]() MOSFET N-Channel 40V MOSFET |
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![]() IPD90N04S4-02 |
![]() Infineon Technologies |
![]() MOSFET N-Channel 40V MOSFET |
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![]() IPD90N04S4-03 |
![]() Infineon Technologies |
![]() MOSFET N-Channel 40V MOSFET |
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(China (Mainland))









