(China (Mainland))
Product Summary
The 2N5686G is a high current complementary silicon power transistor. This package is designed for use in high-power amplifier and switching circuit applications.
Parametrics
2N5686G absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 80Vdc; (2)Collector-Base Voltage, VCB: 80Vdc; (3)Emitter-Base Voltage, VEB: 5.0Vdc; (4)Collector Current, Continuous, IC: 50Adc; (5)Base Current, IB: 15Adc; (6)Total Power Dissipation @ TC = 25℃, PD: 300mW; (7)Total Power Dissipation Derate above 25℃, PD: 1.715mW/℃; (8)Operating and Storage Temperature Range, TJ, Tstg: -65 to +200℃.
Features
2N5686G features: (1)High-Current; (2)Complementary Silicon; (3)Power Transistors; (4)These packages are designed for use in high-power amplifier and; (5)switching circuit applications.; (6)High Current Capability; (7)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2N5686G |
ON Semiconductor |
Transistors Bipolar (BJT) 50A 80V 300W NPN |
Data Sheet |
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2N5609 |
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Data Sheet |
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2N5610 |
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Data Sheet |
Negotiable |
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