Product Summary

The 2N5686G is a high current complementary silicon power transistor. This package is designed for use in high-power amplifier and switching circuit applications.

Parametrics

2N5686G absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 80Vdc; (2)Collector-Base Voltage, VCB: 80Vdc; (3)Emitter-Base Voltage, VEB: 5.0Vdc; (4)Collector Current, Continuous, IC: 50Adc; (5)Base Current, IB: 15Adc; (6)Total Power Dissipation @ TC = 25℃, PD: 300mW; (7)Total Power Dissipation Derate above 25℃, PD: 1.715mW/℃; (8)Operating and Storage Temperature Range, TJ, Tstg: -65 to +200℃.

Features

2N5686G features: (1)High-Current; (2)Complementary Silicon; (3)Power Transistors; (4)These packages are designed for use in high-power amplifier and; (5)switching circuit applications.; (6)High Current Capability; (7)Pb-Free Packages are Available.

Diagrams

2N5686G PACKAGE DIMENSIONS

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N5686G
2N5686G
ON Semiconductor
Transistors Bipolar (BJT) 50A 80V 300W NPN
Data Sheet
0-1: $7.51
1-25: $6.38
25-100: $5.82
100-500: $5.45
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N5603
2N5603
Other

Data Sheet
Negotiable 
2N5604
2N5604
Other

Data Sheet
Negotiable 
2N5605
2N5605
Other

Data Sheet
Negotiable 
2N5606
2N5606
Other

Data Sheet
Negotiable 
2N5607
2N5607
Other

Data Sheet
Negotiable 
2N5629
2N5629
Central Semiconductor
Transistors Bipolar (BJT) NPN High Pwr
Data Sheet
0-180: $3.14
180-260: $2.87
260-500: $2.69
500-1000: $2.60