(China (Mainland))
Product Summary
The DTDG14GP is a Digital transistor (built in resistor and zener diode) Driver.
Parametrics
DTDG14GP absolute maximum ratings: (1)Collector-base voltage, VCBO: 60±10V; (2)Collector-emitter voltage, VCEO: 60±10V; (3)Collector current, IC: 1A; ICP: 2A (pulse); (4)Collector power dissipation, PC: 0.5W; 2W; (5)Junction temperature, Tj: 150℃; (6)Emitter-base voltage, VEBO: 5V; (7)Storage temperature, Tstg: -55 to 150℃.
Features
DTDG14GP features: (1)High hFE. (typ. hFE =750 VCE/IC=2V/0.5A); (2)Low saturation voltage, VCE(sat)=0.4V(IC/IB=500mA/5mA); (3)Built-in zener diode to protect the transistor against reverse voltages when connected to alow load.
Diagrams
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 DTDG14GP |
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Data Sheet |
Negotiable |
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DTDG14GPT100 |
ROHM Semiconductor |
Transistors Switching (Resistor Biased) DIGITAL NPN 60V 1A |
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