(China (Mainland))
Product Summary
The M29W128GH70N6E is a 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.
Parametrics
Absolute maximum ratings: (1)Temperature under bias: -50 to 125 ℃; (2)Storage temperature: -65 to 150 ℃; (3)Input or output voltage: -0.6 to VCC + 0.6 V; (4)Supply voltage: -0.6 to 4 V; (5)Input/output supply voltage: -0.6 to 4 V; (6)Identification voltage: -0.6 to 13.5 V; (7)Program voltage: -0.6 to 13.5 V.
Features
Features: (1)Supply voltage: VCC = 2.7 to 3.6 V for Program, Erase and; (2)Read, VCCQ = 1.65 to 3.6 V for I/O buffers, VPPH = 12 V for Fast Program (optional); (3)Asynchronous Random/Page Read: Page size: 8 words or 16 bytes, Page access: 25, 30 ns, Random access: 60 (only available upon customer request) or 70, 80 ns; (4)Fast Program commands: 32 words (64-byte write buffer); (5)Programming time: 16 μs per byte/word typical, Chip program time: 5 s with VPPH and 8 s without VPPH.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 M29W128GH70N6E |
|
IC FLASH 128MBIT 70NS 56TSOP |
Data Sheet |
|
|
||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
 |
M29W002BB |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
M29W002BT |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
M29W004B |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
M29W004BB |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
M29W004BB120N1 |
STMicroelectronics |
Flash 4M (512Kx8) 120ns |
Data Sheet |
Negotiable |
|
||||||
|
M29W004BB55N1 |
STMicroelectronics |
Flash TSOP-40 512KX8 55NS |
Data Sheet |
Negotiable |
|
||||||
