(China (Mainland))
Product Summary
The Power MOSFET MMFT960T1G is designed for high speed, low loss power switching applications such as switching regulators, dc-dc converters, solenoid and relay drivers. The MMFT960T1G is housed in the SOT223 package which is designed for medium power surface mount applications.
Parametrics
MMFT960T1G absolute maximum ratings: (1)Drain-to-Source Voltage VDS: 60 V; (2)Gate-to-Source Voltage - Non-Repetitive VGS: ±30 V; (3)Drain Current ID: 300 mAdc; (4)Total Power Dissipation @ TA = 25℃: 0.8W; Derate above 25℃: 6.4mW/℃; (5)Operating and Storage Temperature Range TJ, Tstg: -65 to 150 ℃.
Features
MMFT960T1G features: (1)Silicon Gate for Fast Switching Speeds; (2)Low Drive Requirement; (3)The SOT-223 Package can be Soldered Using Wave or Reflow; (4)The Formed Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die; (5)Pb-Free Package is Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||
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 MMFT960T1G |
ON Semiconductor |
MOSFET 60V 300mA N-Channel |
Data Sheet |
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