Product Summary

The BAS21 E6327 is a Silicon Switching Diode.

Parametrics

BAS21 E6327 absolute maximum ratings: (1)Diode reverse voltage VR: 200 V; (2)Peak reverse voltage VRM: 250; (3)Forward current IF: 250 mA; (4)Peak forward current IFM: 625; (5)Surge forward current, t = 10 μs IFS: 4 A; (6)Total power dissipation: 350mW; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature Tstg: -65 to 150℃.

Features

BAS21 E6327 features: (1)For high-speed switching applications; (2)High breakdown voltage.

Diagrams

BAS21 E6327 Test circuit

BAS20
BAS20
Taiwan Semiconductor
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Data Sheet
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Data Sheet
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Data Sheet
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BAS20,215
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Data Sheet
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1-25: $0.01
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BAS20,235
BAS20,235
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Data Sheet
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1-25: $0.01
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Data Sheet
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