Product Summary

The low cost 2N3958-E3 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. The 2N3958-E3 features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The 2N3958-E3 is ideal for: (1)Wideband Differential Amps; (2)High-Speed, Temp-Compensated, Single-Ended Input Amps; (3)High Speed Comparators; (4)Impedance Converters.

Parametrics

2N3958-E3 absolute maximum ratings: (1)Gate-Drain, Gate-Source Voltage: –50 V; (2)Gate Current: 50 mA; (3)Lead Temperature (1/16 from case for 10 sec.): 300 ℃; (4)Storage Temperature: –65 to 200℃; (5)Operating Junction Temperature: –55 to 150℃; (6)Power Dissipation : Per Side: 250 mW; Total: 500 mW.

Features

2N3958-E3 features:(1)Monolithic Design; (2)High Slew Rate; (3)Low Offset/Drift Voltage; (4)Low Gate Leakage: 5 pA; (5)Low Noise: 9 nV√Hz; (6)High CMRR: 100 dB.

Diagrams

2N3958-E3 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N3958-E3
2N3958-E3
Vishay/Siliconix
JFET Dual 50V 0.05
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
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Data Sheet
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Data Sheet
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Data Sheet
Negotiable