(China (Mainland))
Product Summary
The BUK9875-100A is a N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
Parametrics
BUK9875-100A absolute maximum ratings: (1)VDS drain-source voltage (DC): 100 V; (2)VDGR drain-gate voltage (DC) RGS = 20 kΩ - 100 V; (3)VGS gate-source voltage (DC): ±10 V; (4)VGSM non-repetitive gate-source voltage: ±15 V; (5)ID drain current (DC): 7 A; (6)IDM peak drain current: 28 A; (7)Ptot total power dissipation: 8 W; (8)Tstg storage temperature: -55 +150 ℃; (9)Tj operating junction temperature: -55 +150 ℃; (10)IDR reverse drain current (DC): 7 A; (11)IDRM pulsed reverse drain current: 28 A; (12)WDSS non-repetitive avalanche energy: 49 mJ.
Features
BUK9875-100A features: (1)TrenchMOS. technology; (2)Q101 compliant; (3)150 ℃ rated; (4)Logic level compatible.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BUK9875-100A T/R |
NXP Semiconductors |
MOSFET TAPE-7 PWR-MOS |
Data Sheet |
Negotiable |
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BUK9875-100A,115 |
NXP Semiconductors |
MOSFET TAPE-7 PWR-MOS |
Data Sheet |
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